EPC starts mass production of 25V eGaN transistor for dense DC-DC power designs

Efficient Power Conversion has moved its EPC2378 25 V eGaN power transistor into mass production for high-density DC-DC conversion, targeting AI infrastructure, data centers, telecom and industrial systems. The device pairs very low on-resistance with fast switching, and EPC also plans a development board to speed evaluation.

Why it matters: - Power designers building smaller DC-DC converters need devices that cut losses without sacrificing switching speed. - EPC2378 targets higher efficiency and higher power density in systems where thermal limits and board space are tight. - The part is aimed at fast-growing applications including AI infrastructure, data centers, telecom, industrial systems and advanced computing platforms.

What happened: - Efficient Power Conversion announced that the EPC2378 25 V eGaN power transistor has entered mass production. - EPC says the device is optimized for synchronous rectifier use on the secondary side of a 48V-to-8V or 5V LLC converter. - The transistor is available now through EPC’s global distribution channels and direct sales.

The details: - EPC2378 has a typical 370 µΩ RDS(on), which EPC describes as best-in-class. - The device also has a low RDS(on) x QG figure of merit, which supports higher-frequency and higher-efficiency operation. - EPC says the transistor can handle continuous drain currents up to 101 A. - The package is a 3.3 mm x 3.3 mm PQFN with a backside thermal pad. - EPC says the package is designed for high power-density applications that need strong thermal management. - The device is intended for high-current, low-voltage power designs. - EPC plans to introduce the EPC90185 development board to demonstrate the EPC2378. - The board integrates two EPC2378 transistors, a half-bridge gate driver, a dead-time generation circuit, input capacitors, sense points and high-current connectors. - EPC says the board is meant to help engineers evaluate performance in real-world applications. - The EPC2378 is priced at $2.40 each in 3,000-unit reel quantities. - The EPC90185 development board is priced at $226 each. - Both products will be available for delivery from Digi-Key and Mouser by the end of June. - EPC also offers a GaN Power Bench cross-reference tool for designers looking to replace silicon MOSFETs with a GaN alternative. - The cross-reference tool is available at EPC design support.

Between the lines: - EPC is using the launch to position eGaN parts as a practical upgrade path for higher-density power conversion, not just a niche semiconductor option. - The focus on synchronous rectification, high current and compact packaging suggests the company is targeting design bottlenecks around efficiency, heat and board space. - The development board and cross-reference tool are aimed at lowering adoption friction for engineers evaluating a switch from silicon to GaN.

What’s next: - EPC90185 availability through distributors should give engineers a faster path to testing the new transistor in June. - EPC appears to be pushing EPC2378 into designs that need efficient power delivery at higher frequencies, including data center power supplies, synchronous rectification stages and motor drives. - Designers can use EPC’s part cross-reference tool to identify a suggested replacement based on operating conditions.

The bottom line: - EPC is moving a compact, high-current GaN transistor into production at a time when power systems need more efficiency in less space.